Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SIS902DN-T1-GE3
Part Number | SIS902DN-T1-GE3 |
Datasheet | SIS902DN-T1-GE3 datasheet |
Description | MOSFET 2N-CH 75V 4A PPAK 1212-8 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Rds On (Max) @ Id, Vgs | 186 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 38V |
Power - Max | 15.4W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 1212-8 Dual |
Supplier Device Package | PowerPAK® 1212-8 Dual |