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Product Introduction
SI5509DC-T1-GE3
- Part Number
- SI5509DC-T1-GE3
- Manufacturer/Brand
- Vishay Siliconix
- Description
- MOSFET N/P-CH 20V 6.1A 1206-8
- Category
- Transistors - FETs, MOSFETs - Arrays
- RoHs Status
- Lead free / RoHS Compliant
- Series
- TrenchFET®
- Quantity
- 9854pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | SI5509DC-T1-GE3 |
| Description | MOSFET N/P-CH 20V 6.1A 1206-8 |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A, 4.8A |
| Rds On (Max) @ Id, Vgs | 52 mOhm @ 5A, 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 455pF @ 10V |
| Power - Max | 4.5W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | 1206-8 ChipFET™ |
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