Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRLD014PBF

Product Introduction

IRLD014PBF

Part Number
IRLD014PBF
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CH 60V 1.7A 4-DIP
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
1571pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number IRLD014PBF
Description MOSFET N-CH 60V 1.7A 4-DIP
Manufacturer Vishay Siliconix
Series -
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 1.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
Rds On (Max) @ Id, Vgs 200 mOhm @ 1A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)

Latest Products for Transistors - FETs, MOSFETs - Single

TK4A55DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 550V 3.5A TO-220SIS

TK4A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 4A TO-220SIS

TK4A60DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 3.5A TO220SIS

TK4A60DB(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 3.7A TO-220SIS

TK4A65DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 3.5A TO-220SIS

TK5A45DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 450V 4.5A TO-220SIS