Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN1910FE,LF(CT
Product Introduction
RN1910FE,LF(CT
- Part Number
- RN1910FE,LF(CT
- Manufacturer/Brand
- Toshiba Semiconductor and Storage
- Description
- TRANS 2NPN PREBIAS 0.1W ES6
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 16pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | RN1910FE,LF(CT |
| Datasheet | RN1910FE,LF(CT datasheet |
| Description | TRANS 2NPN PREBIAS 0.1W ES6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 250MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |
Latest Products for Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Related Products
- NP0H3A300A
- NP0J1A300A
- UP0111300L
- UP0121300L
- UP0121400L
- UP0331200L
- UP0339000L
- UP0339400L
- UP0339600L
- UP0339700L
- DMC564070R
- UP0411100L
- UP04111G0L
- UP0411200L
- UP0411300L
- UP04113G0L
- UP0411M00L
- UP0411MG0L
- UP0421000L
- UP04210G0L
- UP0421100L
- UP04211G0L
- UP0421300L
- UP04213G0L
- UP0421400L
- UP0421600L
- UP0431100L
- UP04311G0L
- UP0431200L
- UP04312G0L
- UP0431300L
- UP0431400L
- UP04314G0L
- UP0431500L
- UP0431600L
- UP0431N00L
- UP0431NG0L
- UP0439000L
- UP04390G0L
- UP01214G0L