Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN1601(TE85L,F)
Product Introduction
RN1601(TE85L,F)
- Part Number
- RN1601(TE85L,F)
- Manufacturer/Brand
- Toshiba Semiconductor and Storage
- Description
- TRANS 2NPN PREBIAS 0.3W SM6
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 12pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | RN1601(TE85L,F) |
| Datasheet | RN1601(TE85L,F) datasheet |
| Description | TRANS 2NPN PREBIAS 0.3W SM6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 250MHz |
| Power - Max | 300mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Supplier Device Package | SM6 |
Latest Products for Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Related Products
- MUN5136DW1T1
- MUN5137DW1T1
- MUN5137DW1T1G
- MUN5211DW1T1
- MUN5212DW1T1
- MUN5216DW1T1
- MUN5230DW1T1
- MUN5232DW1T1
- MUN5233DW1T1
- MUN5234DW1T1
- MUN5234DW1T1G
- MUN5235DW1T1
- MUN5236DW1T1
- MUN5237DW1T1
- MUN5311DW1T1
- MUN5312DW1T1
- MUN5313DW1T1
- MUN5315DW1T1
- MUN5316DW1T1
- MUN5331DW1T1G
- MUN5332DW1T1
- MUN5332DW1T1G
- MUN5333DW1T1
- MUN5334DW1T1G
- NSB13211DW6T1G
- NSM11156DW6T1G
- NSM21156DW6T1G
- NSM21356DW6T1G
- NSM46211DW6T1G
- NSTB60BDW1T1
- NSB1706DMW5T1
- UMA4NT1
- UMA4NT1G
- UMA6NT1
- UMC2NT1
- UMC2NT1G
- PBLS1501V,115
- PBLS1502V,115
- PBLS1503V,115
- PBLS1504V,115