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Product Introduction

SI7960DP-T1-GE3

Part Number
SI7960DP-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET 2N-CH 60V 6.2A PPAK SO-8
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET®
Quantity
8986pcs Stock Available.

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Product Specifications

Part Number SI7960DP-T1-GE3
Description MOSFET 2N-CH 60V 6.2A PPAK SO-8
Manufacturer Vishay Siliconix
Series TrenchFET®
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 6.2A
Rds On (Max) @ Id, Vgs 21 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.4W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual

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