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Product Introduction
SI7960DP-T1-GE3
- Part Number
- SI7960DP-T1-GE3
- Manufacturer/Brand
- Vishay Siliconix
- Description
- MOSFET 2N-CH 60V 6.2A PPAK SO-8
- Category
- Transistors - FETs, MOSFETs - Arrays
- RoHs Status
- Lead free / RoHS Compliant
- Series
- TrenchFET®
- Quantity
- 8986pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | SI7960DP-T1-GE3 |
| Datasheet | SI7960DP-T1-GE3 datasheet |
| Description | MOSFET 2N-CH 60V 6.2A PPAK SO-8 |
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A |
| Rds On (Max) @ Id, Vgs | 21 mOhm @ 9.7A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 Dual |
| Supplier Device Package | PowerPAK® SO-8 Dual |
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