Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / DMN2016UTS-13
Part Number | DMN2016UTS-13 |
Datasheet | DMN2016UTS-13 datasheet |
Description | MOSFET 2N-CH 20V 8.58A 8-TSSOP |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) Common Drain |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 8.58A |
Rds On (Max) @ Id, Vgs | 14.5 mOhm @ 9.4A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 16.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1495pF @ 10V |
Power - Max | 880mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package | 8-TSSOP |