Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI1988DH-T1-GE3
Part Number | SI1988DH-T1-GE3 |
Datasheet | SI1988DH-T1-GE3 datasheet |
Description | MOSFET 2N-CH 20V 1.3A SC-70-6 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.3A |
Rds On (Max) @ Id, Vgs | 168 mOhm @ 1.4A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.1nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 110pF @ 10V |
Power - Max | 1.25W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-70-6 (SOT-363) |