Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / BSM080D12P2C008
Part Number | BSM080D12P2C008 |
Datasheet | BSM080D12P2C008 datasheet |
Description | SIC POWER MODULE-1200V-80A |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 4V @ 13.2mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 10V |
Power - Max | 600W |
Operating Temperature | 175°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |