Product Introduction
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Product Specifications
Part Number |
US6M1TR |
Datasheet |
US6M1TR datasheet |
Description |
MOSFET N/P-CH 30V/20V TUMT6 |
Manufacturer |
Rohm Semiconductor |
Series |
- |
Part Status |
Active |
FET Type |
N and P-Channel |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
30V, 20V |
Current - Continuous Drain (Id) @ 25°C |
1.4A, 1A |
Rds On (Max) @ Id, Vgs |
240 mOhm @ 1.4A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds |
70pF @ 10V |
Power - Max |
1W |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
6-SMD, Flat Leads |
Supplier Device Package |
TUMT6 |
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