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Part Number | EFC6601R-A-TR |
Description | MOSFET 2N-CH EFCP |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) Common Drain |
FET Feature | Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss) | - |
Current - Continuous Drain (Id) @ 25°C | - |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 2W |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-XFBGA, FCBGA |
Supplier Device Package | EFCP2718-6CE-020 |