Product Introduction
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See Product Specifications
Product Specifications
Part Number |
EPC2106 |
Datasheet |
EPC2106 datasheet |
Description |
GANFET TRANS SYM 100V BUMPED DIE |
Manufacturer |
EPC |
Series |
eGaN® |
Part Status |
Active |
FET Type |
2 N-Channel (Half Bridge) |
FET Feature |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
1.7A |
Rds On (Max) @ Id, Vgs |
70 mOhm @ 2A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 600µA |
Gate Charge (Qg) (Max) @ Vgs |
0.73nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds |
75pF @ 50V |
Power - Max |
- |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
Die |
Supplier Device Package |
Die |
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