Product Introduction
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See Product Specifications
Product Specifications
| Part Number |
EPC2106 |
| Datasheet |
EPC2106 datasheet |
| Description |
GANFET TRANS SYM 100V BUMPED DIE |
| Manufacturer |
EPC |
| Series |
eGaN® |
| Part Status |
Active |
| FET Type |
2 N-Channel (Half Bridge) |
| FET Feature |
GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) |
100V |
| Current - Continuous Drain (Id) @ 25°C |
1.7A |
| Rds On (Max) @ Id, Vgs |
70 mOhm @ 2A, 5V |
| Vgs(th) (Max) @ Id |
2.5V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs |
0.73nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds |
75pF @ 50V |
| Power - Max |
- |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Supplier Device Package |
Die |
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