Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SSM6H19NU,LF
Part Number | SSM6H19NU,LF |
Datasheet | SSM6H19NU,LF datasheet |
Description | MOSFET N-CH 40V 2A 6UDFN |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVII-H |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 8V |
Rds On (Max) @ Id, Vgs | 185 mOhm @ 1A, 8V |
Vgs(th) (Max) @ Id | 1.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.2V |
Vgs (Max) | ±12V |
Input Capacitance (Ciss) (Max) @ Vds | 130pF @ 10V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-UDFN (2x2) |
Package / Case | 6-UDFN Exposed Pad |