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Part Number | PHKD3NQ10T,518 |
Datasheet | PHKD3NQ10T,518 datasheet |
Description | MOSFET 2N-CH 100V 3A 8SOIC |
Manufacturer | Nexperia USA Inc. |
Series | TrenchMOS™ |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 3A |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 633pF @ 20V |
Power - Max | 2W |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |