Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / EPC2103

Product Introduction

EPC2103

Part Number
EPC2103
Manufacturer/Brand
EPC
Description
GAN TRANS SYMMETRICAL HALF BRIDG
Category
Transistors - FETs, MOSFETs - Arrays
RoHs Status
Lead free / RoHS Compliant
Series
eGaN®
Quantity
8687pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number EPC2103
Description GAN TRANS SYMMETRICAL HALF BRIDG
Manufacturer EPC
Series eGaN®
Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 28A
Rds On (Max) @ Id, Vgs 5.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 40V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

Latest Products for Transistors - FETs, MOSFETs - Arrays

IPG20N04S4L08ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

IPG20N06S2L50ATMA1

Infineon Technologies

MOSFET 2N-CH 55V 20A TDSON-8-4

IPG20N06S3L-23

Infineon Technologies

MOSFET 2N-CH 55V 20A TDSON-8

IPG20N06S3L-35

Infineon Technologies

MOSFET 2N-CH 55V 20A TDSON-8

IPG20N06S415ATMA1

Infineon Technologies

MOSFET 2N-CH 8TDSON

IPG20N06S415ATMA2

Infineon Technologies

MOSFET 2N-CH 8TDSON