Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / APTM100A13DG
Part Number | APTM100A13DG |
Datasheet | APTM100A13DG datasheet |
Description | MOSFET 2N-CH 1000V 65A SP6 |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C | 65A |
Rds On (Max) @ Id, Vgs | 156 mOhm @ 32.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 6mA |
Gate Charge (Qg) (Max) @ Vgs | 562nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 15200pF @ 25V |
Power - Max | 1250W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP6 |
Supplier Device Package | SP6 |