Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / APTM50DDAM65T3G
Part Number | APTM50DDAM65T3G |
Datasheet | APTM50DDAM65T3G datasheet |
Description | MOSFET 2N-CH 500V 51A SP3 |
Manufacturer | Microsemi Corporation |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 51A |
Rds On (Max) @ Id, Vgs | 78 mOhm @ 25.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 25V |
Power - Max | 390W |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | SP3 |
Supplier Device Package | SP3 |