IRF6619

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Part Number	IRF6619
Datasheet	IRF6619 datasheet
Description	MOSFET N-CH 20V 30A DIRECTFET
Manufacturer	Infineon Technologies
Series	HEXFET®
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	30A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	57nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5040pF @ 10V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ MX
Package / Case	DirectFET™ Isometric MX