Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / EMH4T2R

Product Introduction

EMH4T2R

Part Number
EMH4T2R
Manufacturer/Brand
Rohm Semiconductor
Description
TRANS 2NPN PREBIAS 0.15W EMT6
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
10pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number EMH4T2R
Description TRANS 2NPN PREBIAS 0.15W EMT6
Manufacturer Rohm Semiconductor
Series -
Part Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA (ICBO)
Frequency - Transition 250MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package EMT6

Latest Products for Transistors - Bipolar (BJT) - Arrays, Pre-Biased

RN1907,LF

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

RN1908(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

RN1909(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

RN1911(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W US6

RN2901(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

RN2902(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6