Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / PMDXB600UNEZ
Part Number | PMDXB600UNEZ |
Datasheet | PMDXB600UNEZ datasheet |
Description | MOSFET 2N-CH 20V 0.6A 6DFN |
Manufacturer | Nexperia USA Inc. |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 600mA |
Rds On (Max) @ Id, Vgs | 620 mOhm @ 600mA, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 21.3pF @ 10V |
Power - Max | 265mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-XFDFN Exposed Pad |
Supplier Device Package | DFN1010B-6 |