Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SSM6N815R,LF
Part Number | SSM6N815R,LF |
Datasheet | SSM6N815R,LF datasheet |
Description | MOSFET 2N-CH 100V 2A 6TSOPF |
Manufacturer | Toshiba Semiconductor and Storage |
Series | U-MOSVIII-H |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate, 4V Drive |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
Rds On (Max) @ Id, Vgs | 103 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 15V |
Power - Max | 1.8W (Ta) |
Operating Temperature | 150°C |
Mounting Type | Surface Mount |
Package / Case | 6-SMD, Flat Leads |
Supplier Device Package | 6-TSOP-F |