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| Part Number | SSM6N815R,LF |
| Datasheet | SSM6N815R,LF datasheet |
| Description | MOSFET 2N-CH 100V 2A 6TSOPF |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate, 4V Drive |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 103 mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 15V |
| Power - Max | 1.8W (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Supplier Device Package | 6-TSOP-F |